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Surface science
Ultra-High-Resolution Schottky Scanning Electron Microscope

SU7000 provides improved signal separation of secondary electrons and back-scattered electrons through innovative technologies including a brand-new detector specifically designed to enhance precision as well as increase throughput. SU7000 enables users to simultaneously acquire several different signals without changing the working distance. It effectively streamlines observation and analysis whereby reducing time input. Additionally, it is equipped with a large specimen chamber and 18 accessory ports, allowing for high performance with even greater versatility.

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Sale area:
  • Hong Kong SAR

Hitachi Ultra-High-Resolution Schottky Scanning Electron Microscope SU7000


The modern FE-SEM requires not only high performance but also a multitude of functionalities including wide-area observation, in-situ analysis, variable pressure, high-resolution imaging at low accelerating voltages, and simultaneous multi-signal collection. Hitachi SU7000 is designed to address these aspects and more by delivering enhanced information for diversified needs in the field of electron microscopy.



Features:

·         Capable of simultaneous observation of secondary electrons, back-scattered electrons, and X-ray analysis under one working distance setting.

·         Detects and displays up to six different types of signals at the same time.

·         Acquires image data at a maximum pixel resolution of 10,240 x 7,680.

·         Features 18 accessory ports, the largest number in its class

·         Available with variable-pressure mode down to 300 Pa (optional)


Main Specifications:

Items

Description

Electron source

ZrO/W Schottky type emitter

Secondary electron resolution

0.8 nm (accelerating voltage 15 kV)

0.9 nm (accelerating voltage 1 kV)

Accelerating voltage

0.1 to 30 kV

Magnification

20 to 2,000,000 X

Irradiation current

Up to 200 nA

Specimen stage

X/Y/Z : 135 x 100 x 40 (mm)



Application: Metal, Material Science, Semiconductors, EBSP analysis


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