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Edinburgh Instruments

In our latest application note, we demonstrate how Photoluminescence and Raman imaging can be used to characterise Gallium Nitride semiconductor devices using the RMS1000 Multimodal Microscope system.
 
Gallium nitride (GaN) is a III - V compound semiconductor with several advantages over traditional silicon such as supporting higher voltages and temperatures.
 
Raman and photoluminescence imaging reveal the hidden electronic and structural properties of the semiconductor layers, providing engineers with the information they require to optimise device architectures and deposition conditions.

To find out more, check our our latest application note:
https://ow.ly/U0R550Uo7cn


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